Point defect creation by proton and carbon irradiation of α-Ga<sub>2</sub>O<sub>3</sub>
نویسندگان
چکیده
Films of α-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were irradiated with protons at energies 330, 400, and 460 keV fluences 6 × 1015 cm−2 7 MeV C4+ ions a fluence 1.3 1013 characterized suite measurements, including Photoinduced Transient Current Spectroscopy (PICTS), Thermally Stimulated (TSC), Microcathodoluminescence (MCL), Capacitance–frequency (C–f), photocapacitance Admittance (AS), as well Positron Annihilation (PAS). Proton irradiation creates conducting layer near the peak ion distribution vacancy defects introduces deep traps Ec-0.25, 0.8, 1.4 eV associated Ga interstitials, gallium–oxygen divacancies VGa–VO, oxygen vacancies VO. Similar observed in C implanted samples. The PAS results can also be interpreted assuming that changes are due to introduction VGa VGa–VO.
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2022
ISSN: ['1089-7550', '0021-8979', '1520-8850']
DOI: https://doi.org/10.1063/5.0100359